UPA1858GR-9JG-E1-A Renesas Electronics America, UPA1858GR-9JG-E1-A Datasheet

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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1858 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 R ...

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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 4 0.2 - 0 Drain to Source Voltage - V DS GATE ...

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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 Pulsed 125 0. ...

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DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 5 4 Gate Charge - ...

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Data Sheet G16276EJ1V0DS PA1858 7 ...

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The information in this document is current as of October, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...