UPA1764G-E1-AT Renesas Electronics America, UPA1764G-E1-AT Datasheet
UPA1764G-E1-AT
Specifications of UPA1764G-E1-AT
Related parts for UPA1764G-E1-AT
UPA1764G-E1-AT Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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DUAL N-CHANNEL POWER MOS FET DESCRIPTION The PA1764 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Dual chip type Low on-state resistance TYP DS(on ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 10 I ...
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FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚ 75˚ 25˚ 25˚C A 0.1 0. Gate to Source Voltage ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 100 T ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 0.1 10 100 Inductive Load - H 6 120 100 ...
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Data Sheet G14329EJ2V0DS PA1764 7 ...
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The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...