IRF6150 International Rectifier, IRF6150 Datasheet - Page 2

• Manufacturer Part Number: IRF6150
• Description: MOSFET 2P-CH 20V 7.9A FLIP-FET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6150

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 7.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: FlipFet™-16
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: IRF6150TR


ƒ
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Electrical Characteristics @ T
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
d(on)
r
d(off)
f
SSS
fs
GSS
(BR)SSS
GS(th)
iss
oss
rss
When mounted on 1 inch square 2oz copper on FR-4
SS(on)
g
gs
G1-S2
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%. Gate voltage applied to both gates.
max. junction temperature.
(BR)SSS
2
/∆T
J
Source-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Miller Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Source-to-Source On-Resistance
Zero Gate Voltage Source Current
Parameter
J
= 25°C (unless otherwise specified)
OBSOLETE
-0.45 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
TBD –––
––– -TBD –––
–––
-20
TBD TBD
TBD TBD
TBD TBD
TBD –––
TBD –––
TBD –––
TBD –––
TBD –––
TBD –––
TBD –––
–––
––– 0.036
––– 0.052
–––
–––
–––
––– -100
–––
-1.2
–––
-1.0
100
-25
V/°C
µA
nA
nC
pF
V
Ω
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
S
S
GS
GS1
GS1
SS
SS
SS
SS
GS
GS
SS
GS
SS
G
GS
GS
SS
= -TBDA
= -1.0A
= 6.0Ω
= V
= -16V
= -10V
= -15V
= -10V, I
= -20V, V
= -16V, V
= 0V, I
= 12V
= -12V
= -5.0V„
= -5.0V „
= 0V
= V
= V
GS
Conditions
GS2
GS2
, I
D
S
= -4.5V, I
= -2.5V, I
S
= -250µA
GS
GS
= -250µA
= -7.9A
= 0V, T
= 0V
D
www.irf.com
S
S
= -1mA
= -7.9A
= -6.3A
J
= 125°C
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