ZXMN2B01FTA Diodes Zetex, ZXMN2B01FTA Datasheet

IC MOSFET N-CHAN 20V SOT23-3

ZXMN2B01FTA

Manufacturer Part Number
ZXMN2B01FTA
Description
IC MOSFET N-CHAN 20V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN2B01FTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
370pF @ 10V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN2B01FTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2B01FTA
Manufacturer:
Diodes
Quantity:
24 600
Part Number:
ZXMN2B01FTA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN2B01FTA/2B1
Manufacturer:
ZETEX
Quantity:
20 000
ZXMN2B01F
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
Applications
Ordering information
Device marking
2B1
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
V
Device
ZXMN2B01FTA
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
20
0.100 @ V
0.150 @ V
0.200 @ V
R
DS(on)
Reel size
(inches)
7
GS
GS
GS
( )
= 4.5V
= 2.5V
= 1.8V
Tape width
(mm)
8
I
D
2.4
2.0
1.7
(A)
1
Quantity per reel
3,000
D
www.zetex.com
G
Top view
D
S
G
S

Related parts for ZXMN2B01FTA

ZXMN2B01FTA Summary of contents

Page 1

... Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN2B01FTA 7 Device marking 2B1 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 I (A) D 2.4 2.0 1.7 Tape width Quantity per reel ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at T =25°C amb ...

Page 3

Thermal characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 ZXMN2B01F 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 ZXMN2B01F 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - March 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 C 0.085 0.120 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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