ZXMN2B01FTA Diodes Zetex, ZXMN2B01FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN2B01FTA
• Description: IC MOSFET N-CHAN 20V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN2B01FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 370pF @ 10V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN2B01FTR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(a)
(b)
(c)
amb
amb
=25°C
=25°C
@ V
@ V
@ V
(a)
(b)
GS
GS
GS
= 4.5V; T
= 4.5V; T
= 4.5V; T
(c)
(b)
amb
amb
amb
=25°C
=70°C
=25°C
2
5 sec.
(b)
(b)
(a)
Symbol
Symbol
T
V
R
R
V
j
I
I
, T
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
JA
JA
stg
-55 to +150
ZXMN2B01F
Limit
Limit
11.8
11.8
625
806
200
155
2.4
1.9
2.1
1.4
6.4
20
±8
5
www.zetex.com
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
A
A
A
A
A
A