SI2304BDS-T1-E3 Vishay, SI2304BDS-T1-E3 Datasheet

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SI2304BDS-T1-E3

Manufacturer Part Number
SI2304BDS-T1-E3
Description
MOSFET N-CH 30V 2.6A SOT23-3
Manufacturer
Vishay
Datasheet

Specifications of SI2304BDS-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 5V
Input Capacitance (ciss) @ Vds
225pF @ 15V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.07 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.6 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.2A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
105mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Power Dissipation Pd
1.08W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2304BDS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2304BDS-T1-E3
Manufacturer:
HONEYWELL
Quantity:
100
Part Number:
SI2304BDS-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI2304BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72503
S-80642-Rev. D, 24-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
0.105 at V
0.070 at V
R
DS(on)
GS
GS
(Ω)
J
a, b
= 4.5 V
= 10 V
= 150 °C)
a
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free)
N-Channel 30-V (D-S) MOSFET
a, b
I
D
3.2
2.6
(A)
G
S
a, b
1
2
A
Si2304BDS (L4)*
* Marking Code
Q
= 25 °C, unless otherwise noted
Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Steady State
Steady State
g
(SOT-23)
Top View
T
T
T
T
TO-236
2.6
(Typ.)
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
D
FEATURES
• Halogen-free Option Available
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
Typical
1.08
0.69
130
5 s
3.2
2.5
0.9
90
60
- 55 to 150
± 20
30
10
Steady State
Maximum
0.62
0.75
0.48
115
166
2.6
2.1
75
Vishay Siliconix
Si2304BDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2304BDS-T1-E3 Summary of contents

Page 1

... V (V) R (Ω) DS DS(on) 0.070 0.105 4 Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2304BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72503 S-80642-Rev. D, 24-Mar- 0.20 0.16 0. °C J 0.08 0.04 0.00 0.8 1.0 1.2 Si2304BDS Vishay Siliconix 350 300 C 250 iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS Capacitance 1 2 ...

Page 4

... Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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