SI2304BDS-T1-E3 Vishay, SI2304BDS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2304BDS-T1-E3
• Description: MOSFET N-CH 30V 2.6A SOT23-3
• Manufacturer: Vishay

Specifications of SI2304BDS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 5V
• Input Capacitance (ciss) @ Vds: 225pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 1.08W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2304BDS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72503
S-80642-Rev. D, 24-Mar-08
0.001
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0.01
0.1
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 2.5 A
V
0.2
On-Resistance vs. Drain Current
= 15 V
GS
T
2
1
V
J
= 4.5 V
SD
= 150 °C
Q
- Source-to-Drain Voltage (V)
g
0.4
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
4
2
0.6
6
3
0.8
T
J
V
= 25 °C
GS
= 10 V
8
4
1.0
10
1.2
5
0.20
0.16
0.12
0.08
0.04
0.00
350
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
50
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 2.5 A
5
= 10 V
2
V
V
T
GS
DS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
C
C
4
oss
iss
15
50
Vishay Siliconix
Si2304BDS
I
6
D
75
= 2.5 A
20
www.vishay.com
100
8
25
125
150
10
30
3