SI3853DV-T1-E3 Vishay, SI3853DV-T1-E3 Datasheet

MOSFET P-CH 20V 1.6A 6-TSOP

SI3853DV-T1-E3

Manufacturer Part Number
SI3853DV-T1-E3
Description
MOSFET P-CH 20V 1.6A 6-TSOP
Manufacturer
Vishay
Datasheet

Specifications of SI3853DV-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
200 mOhm @ 1.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
500mV @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
+/- 1.6 A
Power Dissipation
0.83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-4.5V
Power Dissipation Pd
830mW
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3853DV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3853DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3853DV-T1-E3
Quantity:
2 670
Document Number: 70979
S09-2276-Rev. B, 02-Nov-09
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Ordering Information: Si3853DV-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
V
V
DS
- 20
KA
20
(V)
(V)
3 mm
P-Channel 20-V (D-S) MOSFET with Schottky Diode
G
A
S
Diode Forward Voltage
0.200 at V
0.340 at V
Si3853DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.48 V at 0.5 A
R
DS(on)
Top View
1
2
3
TSOP-6
2.85 mm
V
J
F
= 150 °C) (MOSFET)
GS
GS
(V)
= - 4.5 V
= - 2.5 V
(Ω)
6
5
4
a
a
K
N/C
D
a
A
I
= 25 °C, unless otherwise noted
± 1.8
± 1.3
I
D
F
T
T
T
T
T
T
0.5
(A)
(A)
A
A
A
A
A
A
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
FEATURES
T
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• Compliant to RoHS Directive 2002/95/EC
J
V
V
V
I
I
P
, T
DM
I
I
FM
I
GS
DS
KA
D
S
F
D
Definition
stg
G
- 1.05
± 1.8
± 1.5
± 12
1.15
0.73
0.64
5 s
1.0
P-Channel MOSFET
®
Plus
- 55 to 150
- 20
S
D
± 7
0.5
20
7
Steady State
- 0.75
± 1.6
± 1.2
± 12
0.83
0.53
0.76
0.48
Vishay Siliconix
Si3853DV
K
A
www.vishay.com
Unit
°C
W
V
A
1

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SI3853DV-T1-E3 Summary of contents

Page 1

... 2.85 mm Ordering Information: Si3853DV-T1-E3 (Lead (Pb)-free) Si3853DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...

Page 2

... Si3853DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ Junction-to-Ambient Steady State Junction-to-Foot Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70979 S09-2276-Rev. B, 02-Nov- °C, unless otherwise noted 2.4 3.0 Si3853DV Vishay Siliconix ° ° 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 450 360 C iss 270 180 C ...

Page 4

... Si3853DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C, unless otherwise noted ...

Page 5

... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot = 25 °C, unless otherwise noted A 100 125 150 150 120 Reverse Voltage (V) KA Capacitance Si3853DV Vishay Siliconix - 150 ° °C J 0.1 0 0.2 0.4 0 Forward Voltage Drop (V) F Forward Voltage Drop 16 20 www.vishay.com ...

Page 6

... Si3853DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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