SI3853DV-T1-E3 Vishay, SI3853DV-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI3853DV-T1-E3
• Description: MOSFET P-CH 20V 1.6A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3853DV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: +/- 1.6 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Power Dissipation Pd: 830mW
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3853DV-T1-E3TR

Si3853DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
www.vishay.com/ppg?70979.
10
10
-4
-4
0.02
0.02
0.05
0.05
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
A
10
= 25 °C, unless otherwise noted
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
Notes:
P
0
DM
JM
- T
A
t
1
1
= P
S09-2276-Rev. B, 02-Nov-09
t
2
DM
Document Number: 70979
Z
thJA
thJA
100
(t)
t
t
1
2
= 140 °C/W
6
0
1
0
0