SI3433BDV-T1-E3 Vishay, SI3433BDV-T1-E3 Datasheet

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... UNLESS OTHERWISE NOTED) A Symbol 5 secs 25_C 85_C 25_C 85_C stg Symbol Typical sec R R thJA Steady State Steady State R thJF Si3433 Vishay Siliconix Steady State Unit - "8 - 4.3 - 5.6 - 4 1.7 - 0.9 2.0 1 1.0 0 150 Maximum Unit 45 62.5 _C/W 90 110 C www.vishay.com 2-1 ...

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... Si3433 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

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... V - Source-to-Drain Voltage (V) SD Document Number: 71160 S-00624—Rev. A, 03-Apr-00 New Product 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Vishay Siliconix Capacitance C iss 500 C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 0.8 ...

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... Si3433 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 = 250 0.2 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...