SI4894BDY-T1-GE3 Vishay, SI4894BDY-T1-GE3 Datasheet

MOSFET N-CH 30V 8.9A 8-SOIC

SI4894BDY-T1-GE3

Manufacturer Part Number
SI4894BDY-T1-GE3
Description
MOSFET N-CH 30V 8.9A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4894BDY-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1580pF @ 15V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4894BDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4894BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4894BDY-T1-GE3
Quantity:
2 500
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72993
S09-0540-Rev. D, 06-Apr-09
Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
S
S
S
G
1
2
3
4
Si4894BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.016 at V
0.011 at V
Top View
R
SO-8
DS(on)
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
= 25 °C, unless otherwise noted
I
D
Steady State
Steady State
9.8
12
L = 0.1 mH
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
Available
J
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
9.5
2.3
2.5
1.6
12
43
73
19
G
N-Channel MOSFET
- 55 to 150
± 20
30
40
20
20
Steady State
D
S
Maximum
8.9
7.1
1.3
1.4
0.9
50
90
25
Vishay Siliconix
Si4894BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4894BDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free) Si4894BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4894BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72993 S09-0540-Rev. D, 06-Apr-09 2000 1600 1200 °C J 0.8 1.0 1.2 Si4894BDY Vishay Siliconix C iss 800 C 400 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.2 1.0 0.8 0.6 ...

Page 4

... Si4894BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) 1 Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72993. Document Number: 72993 S09-0540-Rev. D, 06-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4894BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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