SI4894BDY-T1-GE3 Vishay, SI4894BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4894BDY-T1-GE3
• Description: MOSFET N-CH 30V 8.9A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4894BDY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1580pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4894BDY-T1-GE3TR

Si4894BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
3
I
D
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10 -
100
10
1
0.1
2
* V
Limited by R
Limited
125
I
GS
D(on)
Single Pulse
T
Square Wave Pulse Duration (s)
A
150
V
= 25 °C
minimum V
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
10 -
1
1
*
GS
BVDSS Limited
at which R
DS(on)
10
30
24
18
12
6
0
1
10 -
I
DM
is specified
2
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
10 -
1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
t
1
A
S09-0540-Rev. D, 06-Apr-09
= P
t
2
Document Number: 72993
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 71 °C/W
100
600
1000