MC10EP33D ON Semiconductor, MC10EP33D Datasheet - Page 3

• Manufacturer Part Number: MC10EP33D
• Description: Clock Drivers & Distribution 3.3V/5V ECL Divide
• Manufacturer: ON Semiconductor

Specifications of MC10EP33D

• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Input and output parameters vary 1:1 with V
4. All loading with 50 W to V
5. V
Table 4. MAXIMUM RATINGS
Table 5. 10EP DC CHARACTERISTICS, PECL
Symbol
V
V
V
I
I
T
T
q
q
q
q
T
q
T
q
I
V
V
V
V
V
V
I
I
Symbol
out
BB
EE
IH
IL
A
stg
JA
JC
JA
JC
sol
JA
sol
JC
CC
EE
I
OH
OL
IH
IL
BB
IHCMR
input signal.
IHCMR
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 4)
Output LOW Voltage (Note 4)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Output Voltage Reference
Input HIGH Voltage Common Mode
Range (Differential Configuration) (Note 5)
Input HIGH Current
Input LOW Current
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Thermal Resistance (Junction−to−Case)
BB
Sink/Source
Characteristic
CC
Parameter
EE
− 2.0 V.
, V
IHCMR
max varies 1:1 with V
CC
Pb−Free
. V
EE
Pb
V
can vary +0.3 V to −2.2 V.
CC
2165
1365
2090
1365
1790
Min
http://onsemi.com
2.0
0.5
18
V
V
V
V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
<2 to 3 sec @ 248°C
0 lfpm
500 lfpm
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
(Note 2)
= 3.3 V, V
EE
CC
EE
CC
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
−40°C
. The V
2290
1490
1890
Typ
26
3
EE
IHCMR
= 0 V (Note 3)
2415
1615
2415
1690
1990
Max
150
3.3
40
range is referenced to the most positive side of the differential
2230
1430
2155
1430
1855
V
V
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
DFN8
DFN8
DFN8
Min
2.0
0.5
18
I
I
 V
 V
Condition 2
CC
EE
25°C
2355
1555
1955
Typ
26
2480
1680
2480
1755
2055
Max
150
3.3
40
2290
1490
2215
1490
1915
Min
2.0
0.5
18
−65 to +150
−40 to +85
41 to 44
41 to 44
35 to 40
Rating
± 0.5
100
190
130
185
140
265
129
265
265
−6
−6
50
84
6
6
85°C
2415
1615
2015
Typ
26
2540
1740
2540
1815
2115
Max
150
3.3
40
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
Unit
mA
mV
mV
mV
mV
mV
mA
mA
V