SI7636DP-T1-E3 Vishay, SI7636DP-T1-E3 Datasheet

MOSFET N-CH 30V 17A PPAK 8SOIC

SI7636DP-T1-E3

Manufacturer Part Number
SI7636DP-T1-E3
Description
MOSFET N-CH 30V 17A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7636DP-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
5600pF @ 15V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
110 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
28A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7636DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7636DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7636DP-T1-E3
Quantity:
2 500
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72768
S09-0272-Rev. G, 16-Feb-09
Ordering Information: Si7636DP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
6.15 mm
D
0.0048 at V
0.004 at V
7
D
R
DS(on)
6
Si7636DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
PowerP AK SO-8
GS
Bottom View
GS
5
(Ω)
D
= 10 V
= 4.5 V
J
a
= 150 °C)
a
1
S
2
N-Channel 30-V (D-S) MOSFET
S
a
I
3
D
28
25
S
(A)
5.15 mm
4
G
a
b,c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
(Typ.)
36
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Ultra-Low On-Resistance Using High Density
• Q
• New Low Thermal Resistance PowerPAK
• 100 % R
Symbol
Symbol
T
R
R
J
Available
TrenchFET
Package with Low 1.07 mm Profile
- Notebook
- Server
- Workstation
V
V
I
I
Low-Side DC/DC Conversion
Synchronous Rectifier, POL
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
g
D
stg
Optimized
g
Tested
®
Gen II Power MOSFET Technology
Typical
10 s
4.3
5.2
3.3
1.3
28
22
19
52
- 55 to 150
± 20
260
30
60
50
Steady State
Maximum
1.7
1.9
1.2
1.8
17
13
24
65
Vishay Siliconix
G
N-Channel MOSFET
Si7636DP
www.vishay.com
®
D
S
°C/W
Unit
Unit
°C
W
V
A
1

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SI7636DP-T1-E3 Summary of contents

Page 1

... S 6. Bottom View Ordering Information: Si7636DP-T1-E3 (Lead (Pb)-free) Si7636DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current a Maximum Power Dissipation ...

Page 2

... Si7636DP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72768 S09-0272-Rev. G, 16-Feb- 0.010 0.008 0.006 °C J 0.004 0.002 0.000 0.8 1.0 1.2 Si7636DP Vishay Siliconix 7000 6000 C iss 5000 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si7636DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 100 7 5 100 125 150 100 Limited DS(on) ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72768. Document Number: 72768 S09-0272-Rev. G, 16-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7636DP Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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