IRF830ASPBF Vishay, IRF830ASPBF Datasheet - Page 2

• Manufacturer Part Number: IRF830ASPBF
• Description: MOSFET N-CH 500V 5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ASPBF

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
d. Uses SiHF830A data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
T
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
V
R
GS
GS
= 25 °C, I
GS
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 10 V
= 10 V
= 14 Ω, R
= 0 V
= 25 °C, I
= 400 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
DD
TEST CONDITIONS
oss
DS
DS
DS
GS
-
-
F
= 500 V, V
= 250 V, I
= V
while V
= 50 V, I
= 0 V, I
= 5.0 A, dI/dt = 100 A/µs
V
V
V
GS
D
V
DS
S
V
GS
I
GS
GS
D
= 49 Ω, see fig. 10
DS
DS
V
= 5.0 A, V
= ± 30 V
see fig. 6 and 13
, I
= 25 V,
= 5.0 A, V
DS
= 0 V,
= 0 V, T
= 400 V, f = 1.0 MHz
DS
D
= 1.0 V, f = 1.0 MHz
D
D
= 0 V to 400 V
= 250 µA
D
= 250 µA
I
is rising from 0 to 80 % V
GS
= 3.0 A
D
= 5.0 A,
= 3.0 A
D
= 0 V
= 1 mA
GS
J
DS
= 125 °C
G
= 0 V
d
d
= 400 V,
b
d
b, d
b, d
MAX.
b
c, d
D
S
1.7
40
b, d
MIN.
500
2.0
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
S-81352-Rev. A, 16-Jun-08
Document Number: 91062
TYP.
0.60
620
886
430
4.3
2.0
93
27
39
10
21
21
15
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
250
650
4.5
1.4
6.3
5.0
1.5
3.0
25
24
11
20
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V