IRF830ASPBF Vishay, IRF830ASPBF Datasheet - Page 6

• Manufacturer Part Number: IRF830ASPBF
• Description: MOSFET N-CH 500V 5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ASPBF

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
www.vishay.com
6
91062_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
200
500
400
300
100
V
0
GS
25
V
G
Starting T
Q
GS
50
J
, Junction Temperature (°C)
Charge
Q
Q
75
GD
G
100
Bottom
Top
125
2.2 A
3.2 A
5.0 A
I
D
150
91062_12d
790
785
780
775
770
0.0
Fig. 12d - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
1.0
0.2 µF
I
AV
, Avalanche Current (A)
Current sampling resistors
3 mA
50 kΩ
2.0
0.3 µF
I
G
3.0
S-81352-Rev. A, 16-Jun-08
Document Number: 91062
D.U.T.
I
D
4.0
+
-
V
DS
5.0