IRFL9014 Vishay, IRFL9014 Datasheet - Page 3

• Manufacturer Part Number: IRFL9014
• Description: MOSFET P-CH 60V 1.8A SOT223
• Manufacturer: Vishay

Specifications of IRFL9014

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL9014

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
SPECIFICATIONS T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
91195_01
91195_02
Fig. 1 - Typical Output Characteristics, T
Fig. 2 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
0
1
10
-1
0
1
10
Top
Bottom
-1
0
Top
Bottom
- V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
-4.5 V
-
-10 V
- V
V
15 V
DS
GS
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
-4.5 V
DS ,
-10 V
-
V
15 V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
J
a
= 25 °C, unless otherwise noted
10
0
20 µs Pulse Width
T
C
20 µs Pulse Width
T
=
C
SYMBOL
10
25 °C
=
150 °C
1
C
V
I
Q
t
SM
10
I
t
on
= 25 °C
C
SD
S
rr
rr
1
= 150 °C
4.5 V
4.5 V
T
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
T
= 25 °C, I
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
TEST CONDITIONS
F
= - 6.7 A, dI/dt = 100 A/µs
S
91195_04
= - 1.8 A, V
91195_03
Fig. 4 - Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
- 60 - 40 - 20 0
Fig. 3 - Typical Transfer Characteristics
-1
0
1
GS
I
V
G
4
D
GS
= - 6.7 A
= 0 V
= 10 V
IRFL9014, SiHFL9014
- V
T
D
S
b
5
J ,
GS ,
b
Junction Temperature (°C)
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160
6
MIN.
-
-
-
-
-
25
7
Vishay Siliconix
°
C
0.096
TYP.
80
-
-
-
20 µs Pulse Width
V
8
DS
150
=
www.vishay.com
MAX.
- 25 V
- 1.8
- 5.5
S
0.19
- 14
160
and L
°
C
9
D
UNIT
)
10
µC
ns
A
V
3