IRFP17N50LPBF Vishay, IRFP17N50LPBF Datasheet

MOSFET N-CH 500V 16A TO-247AC

IRFP17N50LPBF

Manufacturer Part Number
IRFP17N50LPBF
Description
MOSFET N-CH 500V 16A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP17N50LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2760pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.32 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
16A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
320mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP17N50LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP17N50LPBF
Quantity:
1 800
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 16 A, dI/dt ≤ 347 A/μs, V
TO-247AC
(Ω)
J
= 25 °C, L = 3.0 mH, R
D
a
c
a
a
b
DD
V
GS
≤ V
g
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
130
33
59
AS
This datasheet is subject to change without notice.
= 16 A (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.28
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFP17N50LPbF
SiHFP17N50L-E3
IRFP17N50L
SiHFP17N50L
= 100 °C
= 25 °C
FEATURES
• SuperFast Body Diode Eliminates the Need
• Low Gate Charge Results in Simple Drive
• Enhanced dV/dt Capabilities Offer Improved
• Higher Gate Voltage Threshold Offers Improved Noise
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supply
• Motor Control applications
For External Diodes in ZVS Applications
Requirement
Ruggedness
Immunity
IRFP17N50L, SiHFP17N50L
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
- 55 to + 150
LIMIT
300
± 30
500
390
220
1.8
1.1
16
11
64
16
22
13
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP17N50LPBF Summary of contents

Page 1

... Higher Gate Voltage Threshold Offers Improved Noise Immunity D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supply S • Motor Control applications TO-247AC IRFP17N50LPbF SiHFP17N50L-E3 IRFP17N50L SiHFP17N50L = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFP17N50L, SiHFP17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... IRFP17N50L, SiHFP17N50L 100 5.0V 0.1 10 100 3.0 2.5 2.0 5.0V 1.5 1.0 0.5 0.0 10 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix ° 150 ° 50V DS 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 10 ...

Page 4

... IRFP17N50L, SiHFP17N50L Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss 100 Crss 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 100 200 300 400 V DS, Drain-to-Source Voltage (V) Fig Typ. Output Capacitance Stored Energy vs. V www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... IRFP17N50L, SiHFP17N50L R Fig. 10a - Switching Time Test Circuit 125 150 ° Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) ...

Page 6

... IRFP17N50L, SiHFP17N50L Vishay Siliconix 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10us 10 100us 1ms 1 10ms ° ° 150 C J Single Pulse 0.1 10 100 1000 V , Drain-to-Source Voltage (V) DS Fig Maximum Safe Operating Area D.U 0.01 Ω Fig. 14a - Unclamped Inductive Test Circuit ...

Page 7

... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91205. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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