MOSFET N-CH 100V 5A DPAK

2SK2504TL

Manufacturer Part Number2SK2504TL
DescriptionMOSFET N-CH 100V 5A DPAK
ManufacturerRohm Semiconductor
2SK2504TL datasheet
 

Specifications of 2SK2504TL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs220 mOhm @ 2.5A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id2.5V @ 1mA
Input Capacitance (ciss) @ Vds520pF @ 10VPower - Max20W
Mounting TypeSurface MountPackage / CaseDPak, TO-252 (2 leads+tab), SC-63
ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.22 Ohm @ 4 VDrain-source Breakdown Voltage100 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current5 A
Power Dissipation20000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
Other names2SK2504TL
2SK2504TLTR
  
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Transistors
10
=0V
V
GS
Pulsed
5
Ta=125°C
75°C
2
25°C
−25°C
1
0.5
0.2
0.1
0.05
0
0.5
1.0
1.5
(V)
SOURCE-DRAIN VOLTAGE : V
SD
Fig.10 Reverse Drain Current
vs. Source-Drain Voltage ( Ι )
1000
Ta=25°C
=30V
V
DD
500
=10V
V
GS
=10Ω
R
G
200
Pulsed
100
t
d(off)
50
t
f
t
20
r
10
t
d(on)
5
2
0.05
0.1
0.2
0.5
1
2
5
10
(A)
DRAIN CURRENT : I
D
Fig.13
Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
10µ
100µ
1m
10m
(s)
PULSE WIDTH : PW
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
5
T a =25°C
Pulsed
=10V
V
0V
GS
1
0.5
0.1
0.05
0.01
0
0.5
1.0
(V)
SOURCE-DRAIN VOLTAGE : V
SD
Fig.11 Reverse Drain Current
vs. Source-Drain Voltage ( ΙΙ )
1000
Ta=25°C
di/dt=100A/µs
500
=0V
V
GS
Pulsed
100
50
10
0.1
0.2
0.5
1
2
5
REVERSE DRAIN CURRENT : I
DR
Fig.14 Reverse Recovery Time
vs. Reverse Drain Current
Tc=25°C
θ
(t)=r (t) θ
th(ch-c)
th(ch-c)
θ
=6.25°C/W
th(ch-c)
PW
D= PW
T
T
100m
1
10
2SK2504
10000
1000
100
10
1.5
0.1
1
10
DRAIN-SOURCE VOLTAGE : V
Fig.12 Typical Capacitance
vs. Drain-Source Voltage
1
0
(A)
Rev.A
T a = 25°C
= 0V
V
GS
f = 1MHz
100
(V)
DS
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