IRLML0030TRPBF International Rectifier, IRLML0030TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML0030TRPBF
• Description: MOSFET N-CH 30V 5.3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML0030TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 2.3V @ 25µA
• Gate Charge (qg) @ Vgs: 2.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 382pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML0030TRPBFTR

4
10000
1000
100
100
0.1
Fig 7. Typical Source-Drain Diode
10
10
1
Fig 5. Typical Capacitance Vs.
0.3
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 150°C
0.5
C oss
C rss
C iss
f = 1 MHZ
0.7
10
T J = 25°C
0.9
V GS = 0V
100
1.1
0.01
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
1
Fig 8. Maximum Safe Operating Area
0.1
0
I D = 5.2A
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
1
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
V DS = 24V
V DS = 15V
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
2
1
3
10msec
4
1msec
10
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100µsec
5
6
100
7