IRLML0030TRPBF International Rectifier, IRLML0030TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLML0030TRPBF
• Description: MOSFET N-CH 30V 5.3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML0030TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 2.3V @ 25µA
• Gate Charge (qg) @ Vgs: 2.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 382pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML0030TRPBFTR

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0.001
1000
0.01
100
0.1
10
1E-006
1
6
5
4
3
2
1
0
Fig 9. Maximum Drain Current Vs.
25
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Ambient Temperature
T A , Ambient Temperature (°C)
D = 0.50
50
1E-005
0.02
0.01
0.05
0.20
0.10
75
0.0001
100
SINGLE PULSE
( THERMAL RESPONSE )
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
R
0.1
t
d(on)
V
V
V
t
≤ 0.1 %
≤ 1
r
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
D.U.T.
R
t
d(off)
10
t
f
+
-
V
100
5