IRFR4105TRPBF International Rectifier, IRFR4105TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR4105TRPBF
• Description: MOSFET N-CH 55V 27A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR4105TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 45 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 40 ns
• Gate Charge Qg: 22.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 49 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR4105PBFTR; IRFR4105TRPBF; IRFR4105TRPBFTR

IRFR/U4105PbF
4
1000
1200
1000
100
800
600
400
200
10
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
C
T = 175°C
V
V
Drain-to-Source Voltage
oss
iss
J
rss
SD
DS
Forward Voltage
0.8
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
T = 25°C
gs
gd
ds
J
1.2
+ C
+ C
10
gd
gd
f = 1MHz
, C
ds
1.6
SHORTED
V
GS
= 0V
100
2.0
A
A
1000
100
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
1
I
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
C
J
= 16A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
Q , Total Gate Charge (nC)
DS
10
G
, Drain-to-Source Voltage (V)
BY R
V
V
10
20
DS
DS
DS(on)
= 44V
= 28V
FOR TEST CIRCUIT
SEE FIGURE 13
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30
100µs
10µs
1ms
100
40
A
A