IRFR4105TRPBF International Rectifier, IRFR4105TRPBF Datasheet

MOSFET N-CH 55V 27A DPAK

IRFR4105TRPBF

Manufacturer Part Number
IRFR4105TRPBF
Description
MOSFET N-CH 55V 27A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR4105TRPBF.pdf (11 pages)

Specifications of IRFR4105TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
27A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
45 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
25 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
40 ns
Gate Charge Qg
22.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
49 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR4105PBFTR
IRFR4105TRPBF
IRFR4105TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR4105TRPBF
Manufacturer:
International Rectifier
Quantity:
24 902
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRFR4105TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRFR4105TRPBF
Quantity:
20 000
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
θJA
@ T
@ T
Ultra Low On-Resistance
Surface Mount (IRFR4105)
Straight Lead (IRFU4105)
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚‡
Avalanche Current‡
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
TO-252AA
HEXFET
D-PAK
-55 to + 175
S
D
IRFR4105PbF
IRFU4105PbF
Max.
27…
0.45
100
± 20
6.8
5.0
19
68
65
16
TO-251AA
®
R
I-PAK
DS(on)
Power MOSFET
V
Max.
110
I
2.2
50
D
DSS
PD - 95550A
= 27A
= 0.045Ω
= 55V
…
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRFR4105TRPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRFR/U4105PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM 4.5V 10 4.5V 1 20µs PULSE WIDTH T = 25°C C 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T ...

Page 4

IRFR/U4105PbF 1200 1MHz iss rss gd 1000 iss oss ds gd 800 C oss 600 400 ...

Page 5

LIMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

IRFR/U4105PbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt ...

Page 8

IRFR/U4105PbF EXAMPLE: T HIS IS AN IRF R120 WITH AS SEMB LY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASS EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER IRFU120 ...

Page 9

EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLE 19, 1999 ASSEMBLY LINE "A" Note: "P" embly line pos ition indicates "Lead-F ree" OR ...

Page 10

IRFR/U4105PbF 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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