IRF6721STR1PBF International Rectifier, IRF6721STR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6721STR1PBF
• Description: MOSFET N-CH 30V 14A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6721STR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1430pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 42 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6721STR1PBFTR

DirectFET™ Part Marking
8
™
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
K
L
M
R
P
MIN
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
0.93
2.00
0.616
0.020
0.08
METRIC
DIMENSIONS
MAX
4.85
3.95
2.85
0.45
0.52
0.82
0.92
0.82
0.97
2.10
0.676
0.080
0.17
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
0.037
0.079
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
0.038
0.083
0.0274
0.0031
0.007
MAX
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