IRFZ44EPBF International Rectifier, IRFZ44EPBF Datasheet

MOSFET N-CH 60V 48A TO-220AB

IRFZ44EPBF

Manufacturer Part Number
IRFZ44EPBF
Description
MOSFET N-CH 60V 48A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFZ44EPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 29A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1360pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
48 A
Gate Charge, Total
60 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
0.023 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
70 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
15 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.023Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Continuous Drain Current
48A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ44EPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ44EPBF
Manufacturer:
IR
Quantity:
1 250
www.irf.com
Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
IRFZ44EPbF
-55 to + 175
S
D
Max.
0.71
192
110
± 20
220
5.0
48
34
29
11
®
R
Power MOSFET
DS(on)
Max.
V
–––
1.4
62
DSS
I
D
TO-220AB
= 48A
= 0.023Ω
= 60V
PD - 94822
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
11/10/03
1

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IRFZ44EPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFZ44EPbF HEXFET Max. @ 10V GS @ 10V GS 0.71 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ...

Page 2

... IRFZ44EPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 ° 1.5 ° 175 C J 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFZ44EPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 175 C ° Drain-to-Source Voltage (V) DS 48A V = ...

Page 4

... IRFZ44EPbF 2500 1MHz iss rss 2000 oss iss 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 10a. Switching Time Test Circuit Fig 10a. Switching Time Test Circuit 90% 90% 150 175 150 175 ° 10% 10% ° Fig 10b. Switching Time Waveforms Fig 10b. Switching Time Waveforms 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFZ44EPbF D.U.T. D.U. d(on) d(on d(off) ...

Page 6

... IRFZ44EPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 500 15V 400 DRIVER 300 + - 200 100 V (BR)DSS 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

Page 7

... Low Leakage Inductance Current Transformer - - + • dv/dt controlled • Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFZ44EPbF + =10V ...

Page 8

... IRFZ44EPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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