IRF1018EPBF International Rectifier, IRF1018EPBF Datasheet

MOSFET N-CH 60V 79A TO-220AB

IRF1018EPBF

Manufacturer Part Number
IRF1018EPBF
Description
MOSFET N-CH 60V 79A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1018EPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.4 mOhm @ 47A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
79A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 50V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
79A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
7.1mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Transistor Case Style
TO-220
Rohs Compliant
Yes
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
79 A
Power Dissipation
110 W
Mounting Style
Through Hole
Gate Charge Qg
46 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1018EPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF1018EPBF
Quantity:
25 780
Benefits
l
l
l
Applications
l
l
l
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
E
I
E
R
R
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
θJA
@ T
@ T
High Efficiency Synchronous Rectification in
SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw k
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Junction-to-Case j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 j
Junction-to-Ambient (PCB Mount) , D
Parameter
Parameter
GS
GS
@ 10V
@ 10V
2
Pak ij
G
D
IRF1018EPbF
TO-220AB
Gate
G
G
D
D
S
S
Typ.
0.50
–––
–––
–––
V
R
I
10lbxin (1.1Nxm)
D
-55 to + 175
DSS
DS(on)
IRF1018ESPbF
D
Drain
Max.
0.76
HEXFET Power MOSFET
315
110
± 20
300
79
56
21
88
47
11
D
D
IRF1018ESLPbF
2
Pak
G
IRF1018ESPbF
D
typ.
max.
IRF1018EPbF
S
Max.
1.32
–––
62
40
IRF1018ESLPbF
D
7.1m :
8.4m :
Source
TO-262
60V
79A
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
G
2/28/08
D
S
1

Related parts for IRF1018EPBF

IRF1018EPBF Summary of contents

Page 1

... Symbol R Junction-to-Case j θJC R Case-to-Sink, Flat Greased Surface , TO-220 θCS R Junction-to-Ambient, TO-220 j θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G D TO-220AB IRF1018EPbF G Gate Parameter @ 10V GS @ 10V GS Parameter 2 Pak ij IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET Power MOSFET V D DSS R typ. 7.1m : DS(on) max. 8. Pak IRF1018ESPbF IRF1018ESLPbF ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° 25V ...

Page 4

175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 125 T ...

Page 5

D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 1 Allowed avalanche Current vs ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 47A ...

Page 7

D.U.T + ƒ ‚ -  • • • • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % ...

Page 8

EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L www.irf.com (Dimensions are shown in millimeters (inches)) LOT CODE 1789 INT ERNATIONAL AS S EMBLED ON WW 19, 1997 RECTIFIER EMBLY LINE "C" ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" T HIS IS AN IRF530S WIT H LOT CODE 8024 For GB Production ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Related keywords