IRFP9140NPBF International Rectifier, IRFP9140NPBF Datasheet - Page 5

MOSFET P-CH 100V 23A TO-247AC

IRFP9140NPBF

Manufacturer Part Number
IRFP9140NPBF
Description
MOSFET P-CH 100V 23A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP9140NPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
117 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
97nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
P
Current, Drain
-23 A
Gate Charge, Total
97 nC
Package Type
TO-247AC
Polarization
P-Channel
Power Dissipation
140 W
Resistance, Drain To Source On
0.117 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
5.3 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 21 A
Mounting Style
Through Hole
Gate Charge Qg
64.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP9140NPBF

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0.01
0.1
10
0.00001
1
25
20
15
10
5
0
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
t , Rectangular Pulse Duration (sec)
1
°
150
0.001
175
V
10%
90%
V
GS
DS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
t
≤ 1
r
J
DM
x Z
1
0.1
thJC
P
2
DM
t
d(off)
+ T
C
t
1
t
f
t
2
+
-
1

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