IRF2907ZSTRL7PP International Rectifier, IRF2907ZSTRL7PP Datasheet

IRF2907ZSTRL7PP

Manufacturer Part Number

IRF2907ZSTRL7PP

Description

MOSFET N-CH 75V 160A D2PAK-7

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF2907ZSTRL7PP.pdf (10 pages)

Specifications of IRF2907ZSTRL7PP

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.8 mOhm @ 110A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

160A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Input Capacitance (ciss) @ Vds

7580pF @ 25V

Power - Max

300W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (6 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

180A

Drain Source Voltage Vds

75V

On Resistance Rds(on)

3mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF2907ZSTRL7PPTR

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Features

HEXFET

Description

This HEXFET

processing techniques and advanced packaging

technology to achieve extremely low on-resistance

and world -class current ratings. Additional features

of this design are a 175°C junction operating tem-

perature, fast switching speed and improved repeti-

tive avalanche rating . These features combine to

make this design an extremely efficient and reliable

device for use in Server & Telecom OR'ing and low

voltage Motor Drive Applications.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

@ 10V

(Package Limited)

IRF2907ZS-7PPbF

300 (1.6mm from case )

HEXFET

See Fig.12a,12b,15,16

Typ.

0.50

–––

10 lbf•in (1.1N•m)

-55 to + 175

Max.

180

120

160

700

300

± 20

160

410

2.0

Power MOSFET

DS(on)

Max.

0.50

–––

DSS

= 160A

PD - 97031D

= 3.8m

= 75V

Units

W/°C

°C/W

°C

Related parts for IRF2907ZSTRL7PP

IRF2907ZSTRL7PP Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance j R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA R Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com IRF2907ZS-7PPbF G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 97031D ® ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...

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IRF2907ZSTRL7PP International Rectifier, IRF2907ZSTRL7PP Datasheet

IRF2907ZSTRL7PP

Specifications of IRF2907ZSTRL7PP

Related parts for IRF2907ZSTRL7PP

IRF2907ZSTRL7PP Summary of contents

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