IRF2907ZSTRL7PP International Rectifier, IRF2907ZSTRL7PP Datasheet - Page 2

• Manufacturer Part Number: IRF2907ZSTRL7PP
• Description: MOSFET N-CH 75V 160A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2907ZSTRL7PP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 180A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF2907ZSTRL7PPTR

Notes:

‚
ƒ
„
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
L=0.026mH, R
Part not recommended for use above this value.
Pulse width
C
charging time as C
V
V
max. junction temperature. (See fig. 11).
Limited by T
DSS
oss
DSS
eff.
SMD
.
eff. is a fixed capacitance that gives the same
/ T
J
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.0ms; duty cycle
G
= 25°C (unless otherwise specified)
= 25 , I
, starting T
oss
Parameter
while V
AS
Parameter
= 110A, V
J
™
= 25°C,
DS
is rising from 0 to 80%
2%.
GS
=10V.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
75
94
…
†
‡
ˆ
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is measured at T
avalanche performance.
0.066
7580
3750
1110
–––
–––
–––
–––
–––
–––
–––
170
970
540
650
–––
–––
–––
3.0
4.5
7.5
55
66
21
90
92
44
35
40
-200
–––
–––
–––
250
200
260
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
700
3.8
4.0
1.3
20
53
60
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
m
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
2
Pak, when mounted on 1" square PCB
J
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 110A
= 110A
= 25°C, I
= 25°C, I
= 2.6
= 0V, I
= 10V, I
= V
= 25V, I
= 75V, V
= 75V, V
= 20V
= -20V
= 60V
= 10V
= 38V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
d
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 110A, V
= 110A, V
= 110A
= 110A
= 0V to 60V
= 1.0V, ƒ = 1.0MHz
= 60V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
D
e
= 1mA
G
J
GS
DD
= 125°C
G
= 38V
= 0V
S
D
S
e
D