IRFB31N20DPBF International Rectifier, IRFB31N20DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB31N20DPBF
• Description: MOSFET N-CH 200V 31A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB31N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Input Capacitance (ciss) @ Vds: 2370pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 31 A
• Gate Charge, Total: 70 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.082 Ohm
• Resistance, Thermal, Junction To Case: 0.75 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 31 A
• Mounting Style: Through Hole
• Gate Charge Qg: 70 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB31N20DPBF

Dynamic @ T
Diode Characteristics
Avalanche Characteristics
Thermal Resistance
IRFB/S/SL31N20DPbF
Static @ T
R
R
R
R
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
V
t
Q
t
V
∆V
R
V
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
fs
2
AS
AR
θJC
θCS
θJA
θJA
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
(BR)DSS
DS(on)
GS(th)
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
J
= 25°C (unless otherwise specified)
J
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Parameter
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
17
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
2370 –––
2860 –––
0.25 –––
–––
390
150
170
–––
–––
–––
200
–––
–––
–––
–––
–––
––– -100
––– 0.082
1.7
70
18
33
16
38
26
10
78
–––
107
–––
–––
–––
–––
–––
–––
–––
–––
300
–––
250
100
1.3
2.6
5.5
23
65
124
25
31
V/°C
nC
ns
pF
µC
ns
µA
nA
S
V
Ω
Typ.
V
V
Typ.
0.50
–––
–––
–––
–––
–––
–––
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
D
D
DS
DS
GS
DD
GS
DS
GS
GS
GS
J
J
G
D
GS
GS
DS
DS
DS
GS
GS
= 18A
= 18A
= 25°C, I
= 25°C, I
= 5.4Ω, „
= 2.5Ω
= 50V, I
= 160V
= 10V „
= 100V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 0V, I
= 10V, I
= V
= 200V, V
= 160V, V
= 30V
= -30V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
= 18A, V
Conditions
= 18A
= 18A
= 18A
= 250µA
GS
GS
= 0V to 160V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
0.75
–––
420
62
40
18
20
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
„
J
= 0V „
G
= 150°C
…
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)