MOSFET N-CH 100V 200A TO-247

IXTH200N10T

Manufacturer Part NumberIXTH200N10T
DescriptionMOSFET N-CH 100V 200A TO-247
ManufacturerIXYS
SeriesTrenchMV™
IXTH200N10T datasheet
 


Specifications of IXTH200N10T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5.5 mOhm @ 50A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C200AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs152nC @ 10VInput Capacitance (ciss) @ Vds9400pF @ 25V
Power - Max550WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0055 Ohms
Drain-source Breakdown Voltage100 VContinuous Drain Current200 A
Power Dissipation550 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)100Id(cont), Tc=25°c, (a)200
Rds(on), Max, Tj=25°c, (?)0.0055Ciss, Typ, (pf)9400
Qg, Typ, (nc)152Trr, Typ, (ns)76
Trr, Max, (ns)-Pd, (w)550
Rthjc, Max, (k/w)0.27Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TrenchMV
Power
TM
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062in.) from case for 10s
L
Plastic body for 10 seconds
M
Mounting torque
d
Weight
TO-247
TO-3P
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 250μA
GS(th)
DS
GS
D
= ± 20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= 10V, I
= 50A, Notes 1, 2
DS(on)
GS
D
© 2008 IXYS CORPORATION, All rights reserved
IXTH200N10T
IXTQ200N10T
Maximum Ratings
100
= 1MΩ
100
GS
± 30
200
75
500
JM
40
1.5
550
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
6.0
5.5
Characteristic Values
Min.
Typ.
100
2.5
T
= 150°C
J
4.5
V
= 100V
DSS
I
= 200A
D25
5.5mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
V
V
G
D
V
S
A
TO-3P (IXTQ)
A
A
A
J
G
W
D
S
°C
°C
°C
G = Gate
D
S = Source
TAB = Drain
°C
°C
Nm/lb.in.
Features
g
International standard packages
g
175°C Operating Temperature
Avalanche Rated
Low R
DS(on)
Advantages
Max.
Easy to mount
Space savings
V
High power density
4.5
V
Applications
±200 nA
μA
5
Automotive
- Motor Drives
μA
250
- High Side Switch
5.5 mΩ
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
(TAB)
(TAB)
= Drain
DS99654A(10/08)

IXTH200N10T Summary of contents

  • Page 1

    ... D = ± 20V GSS DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTH200N10T IXTQ200N10T Maximum Ratings 100 = 1MΩ 100 GS ± 30 200 75 500 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 1. 6.0 5.5 Characteristic Values Min. Typ. ...

  • Page 2

    ... I = 50A 47 DSS D 47 0.25 Characteristic Values Min. Typ 205 5.4 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH200N10T IXTQ200N10T TO-247 (IXTH) Outline Max Terminals Gate nC Dim. Millimeter Min 4 2 2.2 2 0.27 °C ...

  • Page 3

    ... Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1 200A D 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTH200N10T IXTQ200N10T 100A Value 100A D 100 125 150 175 100 125 150 175 ...

  • Page 4

    ... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTH200N10T IXTQ200N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...

  • Page 5

    ... 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 50V 25A Ohms G IXTH200N10T IXTQ200N10T T = 25º 125º 105 115 125 300 275 250 225 200 175 150 I = 50A D 125 100 IXYS REF: T_200N10T(6V)9-30-08-D ...