IXTH200N10T IXYS, IXTH200N10T Datasheet
IXTH200N10T
Specifications of IXTH200N10T
Related parts for IXTH200N10T
IXTH200N10T Summary of contents
Page 1
... D = ± 20V GSS DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTH200N10T IXTQ200N10T Maximum Ratings 100 = 1MΩ 100 GS ± 30 200 75 500 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 1. 6.0 5.5 Characteristic Values Min. Typ. ...
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... I = 50A 47 DSS D 47 0.25 Characteristic Values Min. Typ 205 5.4 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH200N10T IXTQ200N10T TO-247 (IXTH) Outline Max Terminals Gate nC Dim. Millimeter Min 4 2 2.2 2 0.27 °C ...
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... Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1 200A D 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTH200N10T IXTQ200N10T 100A Value 100A D 100 125 150 175 100 125 150 175 ...
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... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTH200N10T IXTQ200N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...
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... 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 50V 25A Ohms G IXTH200N10T IXTQ200N10T T = 25º 125º 105 115 125 300 275 250 225 200 175 150 I = 50A D 125 100 IXYS REF: T_200N10T(6V)9-30-08-D ...