IXFH13N50 IXYS, IXFH13N50 Datasheet - Page 4

• Manufacturer Part Number: IXFH13N50
• Description: MOSFET N-CH 500V 13A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH13N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Forward Transconductance Gfs (max / Min): 9 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 32 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 27 ns
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 13
• Rds(on), Max, Tj=25°c, (?): 0.4
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 179
• Rthjc, Max, (ºc/w): 0.70
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4000
3500
3000
2500
2000
1500
1000
1.00
0.10
0.01
500
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D = 0.1
D = 0.2
D = 0.05
D=0.02
D=0.01
V
I
I
D = 0.5
D
G
DS
= 6.5A
= 10mA
= 250V
Single Pulse
5
Gate Charge - nCoulombs
25
0.0001
10
V
DS
C
C
C
iss
oss
rss
50
- Volts
15
75
20
0.001
100
25
Time - Seconds
0.01
100
0.1
10
25
20
15
10
1
5
0
0.00
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
1
Limited by R
0.1
0.25
to Drain Voltage
DS(on)
T
0.50
J
= 125°C
10
V
V
DS
SD
0.75
- Volts
- Volt
1
T
J
1.00
= 25°C
100
IXFH 13N50
IXFH 13N50
1.25
1.50
10
10µs
100µs
100ms
1ms
10ms
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