MOSFET N-CH 150V 160A TO-247

IXFH160N15T

Manufacturer Part NumberIXFH160N15T
DescriptionMOSFET N-CH 150V 160A TO-247
ManufacturerIXYS
SeriesTrenchHV™
IXFH160N15T datasheet
 


Specifications of IXFH160N15T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs9.6 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)150V
Current - Continuous Drain (id) @ 25° C160AVgs(th) (max) @ Id5V @ 1mA
Gate Charge (qg) @ Vgs160nC @ 10VInput Capacitance (ciss) @ Vds8800pF @ 25V
Power - Max830WMounting TypeThrough Hole
Package / CaseTO-247Vdss, Max, (v)150
Id(cont), Tc=25°c, (a)160Rds(on), Max, Tj=25°c, (?)0.0096
Ciss, Typ, (pf)8800Qg, Typ, (nc)160
Trr, Typ, (ns)90Trr, Max, (ns)-
Pd, (w)830Rthjc, Max, (k/w)0.18
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Power MOSFET TrenchHV
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
d
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10s
L
T
Plastic body for 10 seconds
SOLD
M
Mounting torque
d
Weight
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 1mA
GS(th)
DS
GS
D
I
V
= ± 20V, V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
= 0.5 • I
R
V
= 10V, I
DS(on)
GS
D
D25
© 2008 IXYS CORPORATION, All rights reserved
Preliminary Technical Information
TM
IXFH160N15T
Maximum
150
= 1MΩ
150
GS
± 30
160
75
430
JM
5
1
≤ 175°C
10
J
830
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
6
Characteristic Values
Min.
Typ.
150
2.5
T
= 150°C
J
, Note 1
8.0
V
= 150V
DSS
I
= 160A
D25
9.6mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXFH)
Ratings
V
V
V
A
A
G
A
D
S
A
J
V/ns
G = Gate
D = Drain
S = Source
TAB = Drain
W
°C
°C
°C
Features
°C
°C
Unclamped Inductive Switching (UIS)
Nm/lb.in.
rated
Low package inductance
g
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Max.
Applications
V
DC-DC converters
5.0
V
Battery chargers
± 200 nA
Switched-mode and resonant-mode
power supplies
5 μA
DC choppers
250 μA
AC motor control
9.6 mΩ
Uninterruptible power supplies
High speed power switching
applications
(TAB)
DS99965(01/08)

IXFH160N15T Summary of contents

  • Page 1

    ... V = ± 20V GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information TM IXFH160N15T Maximum 150 = 1MΩ 150 GS ± 30 160 75 430 ≤ 175° 830 -55 ... +175 175 -55 ... +175 300 260 1. Characteristic Values Min. Typ. ...

  • Page 2

    ... I D25 DSS 160 , I = 25A 43 DSS D 46 0.25 Characteristic Values Min. Typ 0.55 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH160N15T TO-247AD Outline Max Terminals Gate Source nC Dim. Millimeter Min. 0.18 °C/W A 4.7 °C ...

  • Page 3

    ... 2.0 2.4 2.8 3.2 3.6 = 80A Value 175º 25ºC J 200 240 280 320 IXFH160N15T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2.4 2.0 ...

  • Page 4

    ... I - Amperes D Fig. 10. Gate Charge 75V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXFH160N15T 40ºC J 25ºC 150ºC 140 160 180 200 100 120 140 160 0 ...

  • Page 5

    ... 80A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 15V 75V 40A Ohms G IXYS REF: T_160N15T(8W)06-07-07 IXFH160N15T = 25º 110 d(off) = 15V 100 40A 105 115 125 260 240 220 200 180 160 I = 80A D 140 120 100 ...