IXFH21N50 IXYS, IXFH21N50 Datasheet
IXFH21N50
Manufacturer Part Number
IXFH21N50
Description
MOSFET N-CH 500V 21A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH21N50.pdf
(4 pages)
Specifications of IXFH21N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.25
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
135
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH21N50Q
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
N-Channel Enhancement Mode
High dv/dt, Low t
© 1999 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
D
GS(th)
d
DSS
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
S
C
C
C
C
C
J
J
J
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
150 C, R
I
DM
TM
rr
, di/dt 100 A/ s, V
GS
, HDMOS
, I
D
D
DC
= 250 A
= 4 mA
DSS
G
, V
= 2
DS
= 0
TM
GS
Family
= 1 M
DD
T
T
(T
J
J
J
= 25 C
V
= 125 C
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
= 25 C, unless otherwise specified)
DSS
,
JM
TO-204 = 18 g, TO-247 = 6 g
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
typ.
500
500
104
300
150
300
20
30
21
24
26
84
96
21
24
26
30
5
max.
100
200
Nm/lb.in.
4
1 mA
V/ns
mJ
nA
W
C
C
C
C
V
V
V
V
A
A
A
A
A
A
A
A
A
A
V
V
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• High power surface mountable package
• High power density
TO-247 AD (IXFH)
TO-268 (D3) Case Style
TO-204 AE (IXFM)
G = Gate,
S = Source,
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
V
DS (on)
rr
DSS
G
HDMOS
250 ns
D = Drain,
TAB = Drain
S
I
D25
TM
D
process
91525H (9/99)
R
G
DS(on)
(TAB)
(TAB)
Related parts for IXFH21N50
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFH21N50 Summary of contents
Page 1
... Weight Symbol Test Conditions 250 A DSS GS(th GSS 0.8 • V DSS DS DSS © 1999 IXYS All rights reserved IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 Family Maximum Ratings 500 = 1 M 500 21N50 21 24N50 24 26N50 26 21N50 84 JM 24N50 96 26N50 104 21N50 21 24N50 24 26N50 DSS 300 -55 ... +150 150 -55 ...
Page 2
... Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Characteristic Values Min. Typ. 21N50 ...
Page 3
... GS 1 15V GS 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 30 26N50 25 24N50 20 21N50 -50 - Degrees C C © 1999 IXYS All rights reserved IXFH21N50 IXFM21N50 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ...
Page 4
... D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Fig.8 Forward Bias Safe Operating Area 100 Limited 0.1 1 Fig ...