IXFH26N50Q IXYS, IXFH26N50Q Datasheet

MOSFET N-CH 500V 26A TO-247AD

IXFH26N50Q

Manufacturer Part Number
IXFH26N50Q
Description
MOSFET N-CH 500V 26A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH26N50Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
26 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.20
Ciss, Typ, (pf)
3900
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH26N50Q
Manufacturer:
IXYS
Quantity:
6 500
Part Number:
IXFH26N50Q
Manufacturer:
IXFH
Quantity:
5 510
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
I
I
R
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2003 IXYS All rights reserved
AR
GSS
DSS
D25
DM
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
DSS
DS(on)
DSS
d
Test Conditions
V
V
V
V
V
V
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
S
GS
GS
GS
C
C
C
C
C
C
DS
J
J
J
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, Note 1
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
DSS
, di/dt
, I
D
D
DC
= 250 A
D
= 4 mA
, V
= 0.5 I
G
100 A/ s, V
= 2
DS
g
, High dv/dt
= 0
D25
GS
= 1 M
DD
(T
T
T
24N50Q
26N50Q
J
J
J
= 25 C
= 125 C
24N50Q
26N50Q
24N50Q
26N50Q
24N50Q
26N50Q
= 25 C, unless otherwise specified)
V
DSS
IXFH/IXFT 24N50Q
IXFH/IXFT 26N50Q
,
500
min.
2.5
-55 ... +150
-55 ... +150
Characteristic Values
1.13/10
Maximum Ratings
typ.
500
500
104
300
300
150
1.5
24
26
96
24
26
30
20
30
6
4
5
0.23
0.20
100
max.
4.5
Nm/lb.in.
25
1
V/ns
mJ
mA
W
nA
V
V
V
V
V
C
C
C
C
A
A
A
A
A
A
V
g
g
J
A
500 V
500 V
t
rr
Features
Advantages
TO-247 AD (IXFH)
TO-268 (D3) (IXFT) Case Style
G = Gate,
S = Source,
V
IXYS advanced low Q
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
250 ns
DS (on)
G
24 A
26 A
I
D25
D = Drain,
TAB = Drain
S
DS98512G(03/03)
g
0.23
0.20
process
R
DS(on)
(TAB)
(TAB)

Related parts for IXFH26N50Q

IXFH26N50Q Summary of contents

Page 1

... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Note 2 © 2003 IXYS All rights reserved IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Maximum Ratings 500 = 1 M 500 24N50Q 24 26N50Q 26 24N50Q 96 26N50Q 104 24N50Q 24 26N50Q DSS 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values ...

Page 2

... Note 1. Pulse width limited Pulse test, t 300 s, duty cycle d Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. ...

Page 3

... 2.0 1 1.2 0 Amperes D Fig.3 R vs. Drain Current DS(on) 30 IXF_26N50Q 25 IXF_24N50Q -50 - Degrees C C Fig.5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 25° 100 125 150 IXFH 24N50Q IXFT 24N50Q IXFH 26N50Q IXFT 26N50Q 50 V =10V 125 Volts DS Fig ...

Page 4

... D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0. Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 100 120 O C 1.0 1.2 1.4 10 ...

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