IXTH30N50L2 IXYS, IXTH30N50L2 Datasheet - Page 5

• Manufacturer Part Number: IXTH30N50L2
• Description: MOSFET N-CH 30A 500V TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH30N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 8100pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.200
• Ciss, Typ, (pf): 8100
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
100.0
10.0
1.0
0.1
10
R
Fig. 13. Forward-Bias Safe Operating Area
T
Single Pulse
DS(on)
J
= 150ºC
Limit
@ T
V
DS
C
100
- Volts
= 25ºC
DC
25µs
100µs
1ms
10ms
100ms
1000
100.0
10.0
1.0
0.1
10
R
Fig. 14. Forward-Bias Safe Operating Area
DS(on)
T
Single Pulse
J
= 150ºC
Limit
IXTH30N50L2 IXTQ30N50L2
@ T
V
DS
C
100
- Volts
= 75ºC
IXYS REF: T_30N50L2(7R)4-23-08-A
IXTT30N50L2
DC
25µs
100µs
1ms
10ms
100ms
1000