IXTK120N25P | |
|---|---|
| Manufacturer Part Number | IXTK120N25P |
| Description | MOSFET N-CH 250V 120A TO-264 |
| Manufacturer | IXYS |
| Series | PolarHT™ |
| IXTK120N25P datasheet |
|
Specifications of IXTK120N25P | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 24 mOhm @ 500mA, 10V | Drain To Source Voltage (vdss) | 250V |
| Current - Continuous Drain (id) @ 25° C | 120A | Vgs(th) (max) @ Id | 5V @ 500µA |
| Gate Charge (qg) @ Vgs | 185nC @ 10V | Input Capacitance (ciss) @ Vds | 8000pF @ 25V |
| Power - Max | 700W | Mounting Type | Through Hole |
| Package / Case | TO-264 | Configuration | Single |
| Transistor Polarity | N-Channel | Resistance Drain-source Rds (on) | 0.024 Ohms |
| Drain-source Breakdown Voltage | 250 V | Gate-source Breakdown Voltage | +/- 20 V |
| Continuous Drain Current | 120 A | Power Dissipation | 700 W |
| Maximum Operating Temperature | + 175 C | Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C | Vdss, Max, (v) | 250 |
| Id(cont), Tc=25°c, (a) | 120 | Rds(on), Max, Tj=25°c, (?) | 0.024 |
| Ciss, Typ, (pf) | 8700 | Qg, Typ, (nc) | 185 |
| Trr, Typ, (ns) | 200 | Pd, (w) | 700 |
| Rthjc, Max, (k/w) | 0.18 | Package Style | TO-264 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | ||
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PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 175° C
DSS
J
V
T
= 25° C to 175° C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25° C
D25
C
I
External lead current limit
D(RMS)
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AR
C
E
T
= 25° C
AS
C
≤ I
, di/dt ≤ 100 A/µs, V
dv/dt
I
S
DM
T
≤ 150° C, R
= 4 Ω
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 s
SOLD
M
Mounting torque
d
Weight
Symbol
Test Conditions
(T
= 25° C, unless otherwise specified)
J
= 250 µA
BV
V
= 0 V, I
DSS
GS
D
V
V
= V
, I
= 500µA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
IXTK 120N25P
Maximum Ratings
250
= 1 MΩ
250
GS
±20
±30
120
75
300
JM
60
60
2.5
≤ V
,
10
DD
DSS
700
-55 ... +175
175
-55 ... +150
300
260
1.13/10 Nm/lb.in.
10
Characteristic Values
Min.
Typ.
250
2.5
±200
T
= 125° C
250
J
19
V
= 250 V
DSS
I
= 120 A
D25
≤ ≤ ≤ ≤ ≤ 24 m Ω Ω Ω Ω Ω
R
DS(on)
TO-264 (IXTK)
V
V
V
V
A
G
D
A
S
A
G = Gate
D = Drain
A
S = Source
TAB = Drain
mJ
J
V/ns
Features
W
°C
l
International standard package
°C
l
Unclamped Inductive Switching (UIS)
°C
rated
l
Low package inductance
° C
- easy to drive and to protect
° C
Advantages
g
l
Easy to mount
l
Space savings
l
High power density
Max.
V
5.0
V
nA
µA
25
µA
m Ω
24
(TAB)
DS99175E(12/05)
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IXTK120N25P Summary of contents |
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