IXTK120N25P IXYS, IXTK120N25P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTK120N25P
Manufacturer Part Number
IXTK120N25P
Description
MOSFET N-CH 250V 120A TO-264
Specifications of IXTK120N25P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
8000pF @ 25V
Power - Max
700W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
8700
Qg, Typ, (nc)
185
Trr, Typ, (ns)
200
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
© 2006 IXYS All rights reserved
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 500µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
IXTK 120N25P
DSS
JM
,
250
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
19
1.13/10 Nm/lb.in.
250
250
±20
±30
120
300
700
175
300
260
2.5
75
60
60
10
10
±200
250
Max.
5.0
25
24
V/ns
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
TO-264 (IXTK)
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
G = Gate
S = Source
S
V
I
R
D25
DS(on)
DSS
= 250 V
= 120 A
≤ ≤ ≤ ≤ ≤ 24 m Ω Ω Ω Ω Ω
D = Drain
TAB = Drain
(TAB)
DS99175E(12/05)
Related parts for IXTK120N25P
IXTK120N25P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTK 120N25P Maximum Ratings 250 = 1 MΩ 250 GS ±20 ±30 120 75 300 2.5 ≤ DSS 700 -55 ... +175 175 -55 ... +150 300 260 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 50 ...
... Volts D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 3.8 3.4 3 2.6 2.2 1 15V GS 1 120 150 I - Amperes D © 2006 IXYS All rights reserved C 250 225 200 175 150 125 100 2.5 3 3.5 C 2.8 9V 2.5 2.2 8V 1.9 7V 1.6 1.3 ...
... T = 150 0.2 0.4 0.6 0 olts S D Fig. 11. Capacitance 10000 1000 f = 1MH z 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 110 100 7 7.5 8 8.5 10 º 1.2 1.4 1.6 1000 100 C oss IXTK 120N25P Fig. 8. Trans conductance º ...
... © 2006 IXYS All rights reserved illis IXTK 120N25P ...
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