MOSFET N-CH 250V 120A TO-264

IXTK120N25P

Manufacturer Part NumberIXTK120N25P
DescriptionMOSFET N-CH 250V 120A TO-264
ManufacturerIXYS
SeriesPolarHT™
IXTK120N25P datasheet
 

Specifications of IXTK120N25P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs24 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C120AVgs(th) (max) @ Id5V @ 500µA
Gate Charge (qg) @ Vgs185nC @ 10VInput Capacitance (ciss) @ Vds8000pF @ 25V
Power - Max700WMounting TypeThrough Hole
Package / CaseTO-264ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.024 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current120 APower Dissipation700 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)250
Id(cont), Tc=25°c, (a)120Rds(on), Max, Tj=25°c, (?)0.024
Ciss, Typ, (pf)8700Qg, Typ, (nc)185
Trr, Typ, (ns)200Pd, (w)700
Rthjc, Max, (k/w)0.18Package StyleTO-264
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 175° C
DSS
J
V
T
= 25° C to 175° C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25° C
D25
C
I
External lead current limit
D(RMS)
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AR
C
E
T
= 25° C
AS
C
≤ I
, di/dt ≤ 100 A/µs, V
dv/dt
I
S
DM
T
≤ 150° C, R
= 4 Ω
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 s
SOLD
M
Mounting torque
d
Weight
Symbol
Test Conditions
(T
= 25° C, unless otherwise specified)
J
= 250 µA
BV
V
= 0 V, I
DSS
GS
D
V
V
= V
, I
= 500µA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
IXTK 120N25P
Maximum Ratings
250
= 1 MΩ
250
GS
±20
±30
120
75
300
JM
60
60
2.5
≤ V
,
10
DD
DSS
700
-55 ... +175
175
-55 ... +150
300
260
1.13/10 Nm/lb.in.
10
Characteristic Values
Min.
Typ.
250
2.5
±200
T
= 125° C
250
J
19
V
= 250 V
DSS
I
= 120 A
D25
≤ ≤ ≤ ≤ ≤ 24 m Ω Ω Ω Ω Ω
R
DS(on)
TO-264 (IXTK)
V
V
V
V
A
G
D
A
S
A
G = Gate
D = Drain
A
S = Source
TAB = Drain
mJ
J
V/ns
Features
W
°C
l
International standard package
°C
l
Unclamped Inductive Switching (UIS)
°C
rated
l
Low package inductance
° C
- easy to drive and to protect
° C
Advantages
g
l
Easy to mount
l
Space savings
l
High power density
Max.
V
5.0
V
nA
µA
25
µA
m Ω
24
(TAB)
DS99175E(12/05)

IXTK120N25P Summary of contents

  • Page 1

    ... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTK 120N25P Maximum Ratings 250 = 1 MΩ 250 GS ±20 ±30 120 75 300 2.5 ≤ DSS 700 -55 ... +175 175 -55 ... +150 300 260 1 ...

  • Page 2

    ... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 50 ...

  • Page 3

    ... Volts D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 3.8 3.4 3 2.6 2.2 1 15V GS 1 120 150 I - Amperes D © 2006 IXYS All rights reserved C 250 225 200 175 150 125 100 2.5 3 3.5 C 2.8 9V 2.5 2.2 8V 1.9 7V 1.6 1.3 ...

  • Page 4

    ... T = 150 0.2 0.4 0.6 0 olts S D Fig. 11. Capacitance 10000 1000 f = 1MH z 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 110 100 7 7.5 8 8.5 10 º 1.2 1.4 1.6 1000 100 C oss IXTK 120N25P Fig. 8. Trans conductance º ...

  • Page 5

    ... © 2006 IXYS All rights reserved illis IXTK 120N25P ...