IXTH30N60L2 IXYS, IXTH30N60L2 Datasheet - Page 3

• Manufacturer Part Number: IXTH30N60L2
• Description: MOSFET N-CH 30A 600V TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH30N60L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 335nC @ 10V
• Input Capacitance (ciss) @ Vds: 10700pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 10700
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): 710
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All rights reserved
30
27
24
21
18
15
12
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
30
27
24
21
18
15
12
9
6
3
0
9
6
3
0
0
0
0
V
Fig. 5. R
1
GS
10
= 10V
2
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
3
DS(on)
20
4
2
vs. Drain Current
Normalized to I
30
5
V
I
DS
V
D
@ 125ºC
@ 25ºC
V
DS
- Amperes
GS
- Volts
6
V
40
- Volts
GS
= 20V
3
14V
12V
10V
9V
7
= 20V
12V
10V
9V
8
50
T
J
4
= 125ºC
D
9
= 15A Value
60
10
7V
6V
8V
5V
T
J
= 25ºC
11
5
8V
7V
6V
5V
70
12
80
13
6
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
70
60
50
40
30
20
10
35
30
25
20
15
10
0
5
0
-50
-50
0
Fig. 4. R
V
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
5
IXTH30N60L2 IXTQ30N60L2
DS(on)
vs. Junction Temperature
0
0
V
GS
Case Temperature
T
10
T
C
Normalized to I
J
= 20V
- Degrees Centigrade
25
25
- Degrees Centigrade
14V
12V
10V
V
DS
@ 25ºC
- Volts
15
50
50
9V
8V
7V
6V
I
75
75
D
IXTT30N60L2
20
= 30A
D
= 15A Value
100
100
IXYS REF: T_30N60L2(8R)01-20-09-A
25
I
125
125
D
= 15A
150
150
30