IXTH30N60L2 IXYS, IXTH30N60L2 Datasheet - Page 4

• Manufacturer Part Number: IXTH30N60L2
• Description: MOSFET N-CH 30A 600V TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH30N60L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 335nC @ 10V
• Input Capacitance (ciss) @ Vds: 10700pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 10700
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): 710
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
100
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
0.4
3.5
0
4.0
f
= 1 MHz
5
0.5
4.5
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
5.0
Fig. 11. Capacitance
0.6
5.5
Intrinsic Diode
T
15
J
V
V
V
= 125ºC
SD
DS
GS
6.0
- Volts
- Volts
- Volts
0.7
T
20
J
= 125ºC
6.5
C iss
C oss
C rss
- 40ºC
25ºC
25
7.0
0.8
7.5
30
T
J
8.0
= 25ºC
0.9
35
8.5
1.0
9.0
40
1.000
0.100
0.010
0.001
16
14
12
10
28
26
24
22
20
18
16
14
12
10
0.00001
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
40
D
G
DS
5
= 15A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 300V
80
IXTH30N60L2 IXTQ30N60L2
10
120 160 200 240 280 320 360 400 440 480
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
0.001
15
Pulse Width - Seconds
G
- NanoCoulombs
I
D
Impedance
- Amperes
20
0.01
25
T
J
= - 40ºC
IXTT30N60L2
0.1
30
35
125ºC
1
25ºC
40
45
10