IXFH15N80Q IXYS, IXFH15N80Q Datasheet

MOSFET N-CH 800V 15A TO-247AD

IXFH15N80Q

Manufacturer Part Number
IXFH15N80Q
Description
MOSFET N-CH 800V 15A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH15N80Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.60
Ciss, Typ, (pf)
4300
Qg, Typ, (nc)
90
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH15N80Q
Manufacturer:
IXYS
Quantity:
1 490
Part Number:
IXFH15N80Q
Manufacturer:
IXYS
Quantity:
6 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
AS
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
D
= 3 mA
= 4 mA
, V
= 0.5 I
G
= 2 W
DS
= 0
D25
GS
= 1 MW
TO-247
TO-268
DD
£ V
T
T
J
J
= 25°C
= 125°C
DSS
g
JM
,
Min. Typ.
800
IXFH 15N80Q
IXFT 15N80Q
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
300
800
800
±20
±30
300
150
1.0
15
60
15
30
5
6
4
±100
0.60
Max.
4.5
25
1
V/ns
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
V
V
V
V
A
A
A
V
V
J
g
g
V
I
R
t
TO-247 AD (IXFH)
TO-268 (D3) (IXFT) Case Style
G = Gate
S = Source
Features
• IXYS advanced low Q
• International standard packages
• Low R
• Unclamped Inductive Switching (UIS)
• Fast switching
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
D25
rr
rated
flammability classification
DSS
DS(on)
£ 250 ns
DS (on)
G
S
D = Drain
TAB = Drain
=
=
= 0.60 W
g
800 V
process
98514B (7/00)
15 A
(TAB)
(TAB)
1 - 4

Related parts for IXFH15N80Q

IXFH15N80Q Summary of contents

Page 1

... DSS DS DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 15N80Q IXFT 15N80Q g Maximum Ratings 800 = 1 MW 800 GS ±20 ± 1.0 £ V ...

Page 2

... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 15N80Q IXFT 15N80Q TO-247 AD (IXFH) Outline ...

Page 3

... 1.2 1.0 0 Amperes D Figure 3. R normalized to value at I DS(on IXFH15N80 12 IXFH14N80 -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved Figure 2. Output Characteristics at 125 12A Figure 100 125 150 IXFH 15N80Q IXFT 15N80Q 125 ...

Page 4

... V - Volts SD Figure 9. Source Current vs. Source to Drain Voltage 1.00 D=0.5 0.10 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0. Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 10000 1000 100 10 100 120 1.2 1.4 1 Figure10. Forward Bias Safe Operating ...

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