TPCA8048-H(TE12L,Q Toshiba, TPCA8048-H(TE12L,Q Datasheet - Page 23

• Manufacturer Part Number: TPCA8048-H(TE12L,Q
• Description: MOSFET N-CH 60V 35A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8048-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 35A
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Other names: TPCA8048-HTE12LQTR

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Recommended Implementation to Reduce the MOSFET Count and Board Area Required
Product Lineup
Part Number
TPCP8001-H
TPCP8005-H
TPCM8001-H
TPCM8003-H
TPCM8002-H
TPCM8004-H
TPCM8A05-H
TPC8021-H
TPC8031-H
TPC8037-H
TPC8038-H
TPC8032-H
TPC8033-H
TPC8034-H
TPC8040-H
TPC8039-H
TPC8036-H
TPC8035-H
TPC8216-H
TPC8A05-H
TPC8A03-H
TPC8A04-H
TPCA8023-H
TPCA8030-H
TPCA8031-H
TPCA8018-H
TPCA8012-H
TPCA8019-H
TPCA8040-H
TPCA8039-H
TPCA8036-H
TPCA8028-H
TPCA8A05-H
TPCA8A02-H
TPCA8A04-H
High-Side FET: TPCA8005-H x 2
Low-Side FET: TPCA8004-H x 4
Conventional DC-DC Converter
Absolute Maximum Ratings
V
DSS
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
(V)
V
V
CC
CC
High-Side FET
High-Side FET
High-Side FET
High-Side FET
I
D
7.2
6.4
11
20
21
30
24
20
11
11
12
12
15
17
18
13
17
18
18
10
15
18
21
24
24
30
40
45
23
34
38
50
20
34
42
(A)
Low-Side
Low-Side
FET
FET
Low-Side
Low-Side
FET
FET
Packaging
Advance
Advance
TSSOP
SOP-8
PS-8
SOP
CPU
Configuration
Improved efficiency and
reduced MOSFET count
(board space saving and
cost reduction)
N-ch Single
N-ch Single
N-ch Single
N-ch Dual
MOSBD
MOSBD
MOSBD
4.5 V
15.7
15.7
13.4
17.2
16.1
13.9
13.9
11.1
17.6
15.7
13.4
13.4
10.8
17.2
8.2
8.6
7.2
4.5
6.9
5.1
3.6
7.0
4.5
8.2
6.8
4.1
6.6
4.8
3.2
6.7
4.1
25
14
25
23
R
DS(ON)
High-Side FET: TPCA8030-H x 2
Low-Side FET: TPCA8028-H x 2
Max (mΩ)
10 V
12.9
12.9
12.9
13.3
11.4
11.4
13.3
12.9
12.9
9.5
6.2
6.5
5.3
3.5
9.7
4.5
3.2
5.6
3.6
6.2
4.9
3.1
9.4
5.7
4.2
2.8
5.3
3.2
New Implementation
16
11
17
20
11
11
6
V
V
V
CC
CC
DS
Crss (pF)
= 10 V, V
120
135
135
170
284
110
170
230
380
100
180
135
170
284
110
170
230
380
100
180
75
83
83
83
55
75
83
83
83
65
55
83
83
83
55
Low-Side
Low-Side
FET
FET
Low-Side
Low-Side
FET
FET
High-Side FET
High-Side FET
High-Side FET
High-Side FET
GS
= 0 V, f = 1 MHz
Ciss (pF)
1433
1130
1433
2270
1433
1300
1433
1433
1433
2270
2900
4614
1700
2600
3500
6000
1300
2640
4400
1433
1433
1433
2270
2900
4614
1700
2600
3500
6000
1300
2640
4400
640
640
900
CPU
U-MOSIII-H
U-MOSIII-H
U-MOSIII-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSVI-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
U-MOSV-H
V-MOSBD
V-MOSBD
V-MOSBD
Series
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