NTE4153NT1G ON Semiconductor, NTE4153NT1G Datasheet

MOSFET N-CH 20V 915MA SC-89

NTE4153NT1G

Manufacturer Part Number
NTE4153NT1G
Description
MOSFET N-CH 20V 915MA SC-89
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheet
1.NTE4153NT1G.pdf (6 pages)

Specifications of NTE4153NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
230 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
915mA
Vgs(th) (max) @ Id
1.1V @ 250µA
Gate Charge (qg) @ Vgs
1.82nC @ 4.5V
Input Capacitance (ciss) @ Vds
110pF @ 16V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.915 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.23Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±6V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTE4153NT1GOSTR

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NTA4153N, NTE4153N
Small Signal MOSFET
20 V, 915 mA, Single N−Channel
with ESD Protection, SC−75 and SC−89
Features
•
•
•
•
Applications
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
THERMAL RESISTANCE RATINGS
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Ambient − Steady State (Note 1)
Low R
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
Pb−Free Packages are Available
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
(Cu area = 1.127 in sq [1 oz] including traces).
DS(on)
Improving System Efficiency
Parameter
Parameter
(T
J
Steady
SC−75 / SOT−416
= 25°C unless otherwise stated)
State
Steady State
t
p
=10 ms
T
T
A
A
= 25°C
= 85°C
SC−89
Symbol
Symbol
V
T
R
V
I
T
P
DSS
STG
T
I
DM
I
qJA
GS
D
S
J
D
L
,
−55 to
Value
Value
±6.0
915
660
300
150
280
260
416
400
1.3
20
1
Units
Units
°C/W
mW
mA
mA
°
°C
V
V
A
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
3
3
V
Source
(BR)DSS
20 V
Gate
N−Channel MOSFET
1
1
XX
M
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
2
2
SC−75 / SOT−416
1
2
1
http://onsemi.com
CASE 463C
CASE 463
STYLE 5
= Device Code
= Date Code*
= Pb−Free Package
0.127 W @ 4.5 V
0.170 W @ 2.5 V
0.242 W @ 1.8 V
0.500 W @ 1.5 V
SC−89
SC−75, SC−89
R
DS(on)
Top View
MARKING DIAGRAM &
Publication Order Number:
PIN ASSIGNMENT
TYP
3
Gate
1
XX MG
2
Drain
3
G
NTA4153N/D
3
Source
915 mA
I
D
2
MAX
Drain

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NTE4153NT1G Summary of contents

Page 1

NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • Low R Improving System Efficiency DS(on) • Low Threshold Voltage, 1.5 V Rated • ESD Protected Gate • Pb−Free Packages are ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4153NT1 NTA4153NT1G NTE4153NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTA4153N, NTE4153N (T = 25°C unless otherwise stated) ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 1.2 2 0.8 0.6 0.4 0 0.5 1.0 1.5 2.0 2 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 4.5 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 0.4 0.8 1 TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source Voltage vs. Total Gate Charge 1 0.5 0.2 0.1 ...

Page 5

... L A1 SOLDERING FOOTPRINT* 1.803 0.071 0.508 0.020 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 6

... SCALE 10:1 details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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