NTE4153NT1G ON Semiconductor, NTE4153NT1G Datasheet - Page 2

• Manufacturer Part Number: NTE4153NT1G
• Description: MOSFET N-CH 20V 915MA SC-89
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTE4153NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 915mA
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 1.82nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 16V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.23 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.915 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.23Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTE4153NT1GOSTR

2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
NTA4153NT1
NTA4153NT1G
NTE4153NT1G
Parameter
Device
(Note 2)
(T
V
V
J
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
= 25°C unless otherwise stated)
(BR)DSS
C
C
t
d(OFF)
GS(TH)
Marking
I
I
C
G(TOT)
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
G(TH)
OSS
RSS
FS
ISS
t
t
SD
GS
GD
(XX)
r
f
TR
TR
TP
/T
/T
NTA4153N, NTE4153N
J
J
http://onsemi.com
I
V
V
V
V
V
V
S
V
V
V
V
V
V
GS
V
GS
GS
GS
GS
GS
= 200 mA
DS
I
DS
GS
GS
GS
D
GS
GS
= 0.2 A, R
= 4.5 V, V
= 0 V,
Test Condition
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 4.5 V, V
SC−75 / SOT−416
SC−75 / SOT−416
= 10 V, I
= 0 V, V
= 0 V, f = 1.0 MHz,
= 1.5 V, I
= V
= 0 V, I
= 0 V, V
V
I
D
2
DS
DS
(Pb−Free)
(Pb−Free)
Package
= 0.2 A
SC−89
, I
= 16 V
D
GS
D
D
D
D
D
DS
D
DS
DD
G
= 250 mA
= 400 mA
= 250 mA
= 600 mA
= 500 mA
= 350 mA
= ±4.5 V
= 40 mA
= 10 W
T
= 16 V
T
= 10 V,
= 10 V,
J
J
= 125°C
= 25°C
0.45
Min
20
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
−2.15
Shipping
18.4
0.76
1.82
0.42
0.67
0.54
Typ
127
170
242
500
110
1.4
0.2
0.3
3.7
4.4
7.6
26
16
12
25
†
9500
Max
±1.0
100
230
275
700
1.1
1.1
mV/°C
mV/°C
Unit
mW
nA
mA
nC
pF
ns
V
V
S
V