NTK3139PT1G ON Semiconductor, NTK3139PT1G Datasheet
NTK3139PT1G
Manufacturer Part Number
NTK3139PT1G
Description
MOSFET P-CH 20V 660MA SOT-723
Manufacturer
ON Semiconductor
Datasheet
1.NTK3139PT1G.pdf
(5 pages)
Specifications of NTK3139PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 780mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Input Capacitance (ciss) @ Vds
170pF @ 16V
Power - Max
310mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.48 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.2 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.78 A
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTK3139PT1G
NTK3139PT1GOSTR
NTK3139PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTK3139PT1G
Manufacturer:
ON
Quantity:
52 000
Company:
Part Number:
NTK3139PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTK3139PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Power MOSFET
−20 V, −780 mA, Single P−Channel with
ESD Protection, SOT−723
Features
•
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
NTK3139P
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Cur-
rent
Operating Junction and Storage Tempera-
ture
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
P−channel Switch with Low R
44% Smaller Footprint and 38% Thinner than SC−89
Low Threshold Levels Allowing 1.5 V R
Operated at Low Logic Level Gate Drive
These are Pb−Free Devices
Load/Power Switching
Interfacing, Logic Switching
Battery Management for Ultra Small Portable Electronics
[1 oz] including traces)
Parameter
Steady
t v 5 s
Steady
t v 5 s
Steady
t
State
State
State
p
(T
= 10 ms
J
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
A
A
A
A
A
A
A
DS(on)
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
DS(on)
T
Symbol
J
V
V
, T
I
P
P
T
DSS
I
I
DM
GS
D
D
D
D
L
STG
Rating
−55 to
Value
−780
−570
−870
−660
−480
−1.2
−20
450
550
310
150
260
± 6
1
Unit
mW
mW
mA
mA
°C
°C
V
V
A
†For information on tape and reel specifications,
*These packages are inherently Pb−Free.
NTK3139PT1G
NTK3139PT5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
(BR)DSS
CASE 631AA
−20 V
Device
SOT−723
STYLE 5
ORDERING INFORMATION
SOT−723 (3−LEAD)
http://onsemi.com
1
0.38 W @ −4.5 V
0.52 W @ −2.5 V
0.70 W @ −1.8 V
0.95 W @ −1.5 V
R
SOT−723*
SOT−723*
DS(on)
Package
Top View
KD = Specific Device Code
M
Publication Order Number:
3
MARKING DIAGRAM
TYP
= Date Code
1
4000 / Tape & Reel
8000 / Tape & Reel
2
KD M
Shipping
NTK3139P/D
−780 mA
−660 mA
−100 mA
−100 mA
1 − Gate
2 − Source
3 − Drain
I
D
Max
†
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NTK3139PT1G Summary of contents
Page 1
... STYLE 5 ° − STG 150 °C T 260 L Device NTK3139PT1G NTK3139PT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb−Free. 1 http://onsemi.com R TYP I Max ...
Page 2
THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – (Note 3) Junction−to−Ambient – Steady State Minimum Pad (Note 4) 3. Surface mounted on FR4 board using pad size (Cu area ...
Page 3
V = −4 −2 1 25°C J 1.0 0 0.5 1 1.5 2 2.5 3 3.5 4 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 3.0 2.5 2.0 1.5 ...
Page 4
C iss 120 oss C rss −DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 2 1.5 1.0 0.5 0 0.4 Figure 9. Diode Forward Voltage vs. ...
Page 5
... X *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...