NTK3139PT1G ON Semiconductor, NTK3139PT1G Datasheet - Page 5

• Manufacturer Part Number: NTK3139PT1G
• Description: MOSFET P-CH 20V 660MA SOT-723
• Manufacturer: ON Semiconductor

Specifications of NTK3139PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 170pF @ 16V
• Power - Max: 310mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.2 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.78 A
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTK3139PT1G; NTK3139PT1GOSTR

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b1
1
e
3
D
2
−X−
E
b
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
2X
0.08 (0.0032)
−Y−
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
X
Y
0.0157
0.40
A
0.0157
0.0157
0.40
0.40
L
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
C
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
H
http://onsemi.com
E
CASE 631AA−01
NTK3139P
SOT−723
ISSUE C
5
0.0157
0.40
0.0157
0.40
SCALE 20:1
0.039
1.0
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
Y14.5M, 1982.
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
FLASH, PROTRUSIONS OR GATE BURRS.
STYLE 5:
DIM
H
b1
A
b
C
D
E
L
PIN 1. GATE
e
E
inches
mm
2. SOURCE
3. DRAIN
MIN
0.45
0.15
0.25
0.07
1.15
0.75
1.15
0.15
MILLIMETERS
0.40 BSC
NOM
0.50
0.21
0.31
0.12
1.20
0.80
1.20
0.20
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
0.55
0.27
0.37
0.17
1.25
0.85
1.25
0.25
0.0059 0.0083 0.0106
0.0028 0.0047 0.0067
0.0059 0.0079 0.0098
MIN
0.018
0.010
0.045
0.045
0.03
0.016 BSC
INCHES
NOM
0.020
0.012
0.047
0.032
0.047
NTK3139P/D
MAX
0.022
0.015
0.049
0.034
0.049