2N7000G ON Semiconductor, 2N7000G Datasheet - Page 2

• Manufacturer Part Number: 2N7000G
• Description: MOSFET N-CH 60V 200MA TO-92
• Manufacturer: ON Semiconductor

Specifications of 2N7000G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Drain: 200 mA
• Package Type: TO-92 (TO-226)
• Polarization: N-Channel
• Power Dissipation: 350 mW
• Resistance, Drain To Source On: 5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 100 Micromhos
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 2N7000G; 2N7000GOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 1)
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
2N7000
2N7000G
2N7000RLRA
2N7000RLRAG
2N7000RLRMG
2N7000RLRPG
Device
Characteristic
R
G
= 25 W, R
(V
C
(V
DS
= 25°C unless otherwise noted)
(V
DD
DS
= 48 Vdc, V
(V
= 15 V, I
(V
(V
(V
f = 1.0 MHz)
DS
= 25 V, V
(V
(V
GS
GS
GS
L
(V
GS
GS
= 30 W, V
= 10 Vdc, I
(V
DS
= 4.5 Vdc, V
= 4.5 Vdc, I
= 4.5 Vdc, I
(V
http://onsemi.com
(V
GSF
= 10 Vdc, I
= 10 Vdc, I
D
= V
DS
GS
= 500 mA,
GS
GS
= 48 Vdc, V
= 15 Vdc, V
GS
= 0, I
2N7000
gen
= 0,
= 0, T
, I
(Pb-Free)
(Pb-Free)
(Pb-Free)
(Pb-Free)
Package
D
D
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
D
D
= 10 V)
2
D
DS
= 200 mAdc)
D
D
= 1.0 mAdc)
= 75 mAdc)
= 75 mAdc)
= 10 mAdc)
J
= 0.5 Adc)
= 0.5 Adc)
= 10 Vdc)
= 125°C)
GS
DS
= 0)
= 0)
V
Symbol
V
V
r
(BR)DSS
I
DS(on)
I
I
GSSF
C
DS(on)
C
GS(th)
C
d(on)
DSS
g
t
t
on
off
oss
rss
iss
fs
2000 Tape & Ammo Box
2000 Tape & Ammo Box
2000 Tape & Reel
2000 Tape & Reel
Min
100
1000 Units / Bulk
1000 Units / Bulk
0.8
60
75
-
-
-
-
-
-
-
-
-
-
-
-
Shipping
†
Max
0.45
-10
1.0
1.0
3.0
5.0
6.0
2.5
5.0
60
25
10
10
-
-
-
mmhos
mAdc
mAdc
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
pF
ns
W