2N7000G ON Semiconductor, 2N7000G Datasheet - Page 3

• Manufacturer Part Number: 2N7000G
• Description: MOSFET N-CH 60V 200MA TO-92
• Manufacturer: ON Semiconductor

Specifications of 2N7000G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Drain: 200 mA
• Package Type: TO-92 (TO-226)
• Polarization: N-Channel
• Power Dissipation: 350 mW
• Resistance, Drain To Source On: 5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 100 Micromhos
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 2N7000G; 2N7000GOS

2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.4
0.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 60
0
V
I
T
D
1.0
GS
A
= 200 mA
= 25°C
Figure 3. Temperature versus Static
= 10 V
- 20
2.0
V
Drain-Source On-Resistance
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
3.0
T, TEMPERATURE (°C)
4.0
+ 20
5.0
6.0
+ 60
7.0
V
+ 100
8.0
GS
= 10 V
http://onsemi.com
9 V
8 V
7 V
6 V
5 V
4 V
3 V
9.0
2N7000
+ 140
10
3
1.05
1.10
0.95
0.85
0.75
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
- 60
0
V
1.0
DS
Figure 4. Temperature versus Gate
= 10 V
Figure 2. Transfer Characteristics
- 20
2.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
3.0
Threshold Voltage
T, TEMPERATURE (°C)
+ 20
4.0
5.0
- 55°C
+ 60
6.0
7.0
+ 100
V
I
D
8.0
DS
125°C
= 1.0 mA
= V
9.0
GS
25°C
+ 140
10