2SK3050TL Rohm Semiconductor, 2SK3050TL Datasheet

MOSFET N-CH 600V 2A DPAK

2SK3050TL

Manufacturer Part Number
2SK3050TL
Description
MOSFET N-CH 600V 2A DPAK
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SK3050TL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
25.6nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK3050TLTR
TSZ22111 ・ 03
DESIGN
1. TYPE
2. STRUCTURE
3. APPLICATIONS
4. ABSOLUTE MAXIMUM RATINGS [Ta=25 ℃ ]
5. THERMAL RESISTANCE
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
DRAIN CURRENT
SOURCE CURRENT CONTINUOUS
TOTAL POWER DISSIPATION
CANNEL TEMPERATURE
RANGE OF STRAGE TEMPERATURE
CHANNEL TO CASE
CHECK
(Tc=25 ℃ )
PRODUCTS
SILICON N -CHANNEL MOS FIELD EFFECT TRANSISTOR
SWITCHING
APPROVAL
2SK3050
PULSED
PULSED
CPT3
CONTINUOUS
DATE:14.JAN.2000
REV. A
TYPE
SPECIFICATION No. : TSQ03019-108-E00
2SK3050
IS
VDSS
ID
IDP
Tch
IGSS
I S P
PD
Tstg
Rth(ch-c) ・・・ 6.25 ℃ /W
PW ≦ 10 μ s DUTY CYCLE ≦ 1%
PW ≦ 10 μ s DUTY CYCLE ≦ 1%
・・・
・・・
・・・ ± 30V
・・・
・・・ 20W
・・・ 600V
・・・
・・・ 150 ℃
・・・ -55 ∼ 150 ℃
2A
2A
6A
6A
PAGE
1/3

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2SK3050TL Summary of contents

Page 1

PRODUCTS 1. TYPE 2SK3050 SILICON N -CHANNEL MOS FIELD EFFECT TRANSISTOR 2. STRUCTURE 3. APPLICATIONS SWITCHING 4. ABSOLUTE MAXIMUM RATINGS [Ta=25 ℃ ] DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE DRAIN CURRENT SOURCE CURRENT CONTINUOUS TOTAL POWER DISSIPATION (Tc=25 ℃ ) CANNEL TEMPERATURE ...

Page 2

PRODUCTS 6. ELECTRICAL CHARACTERISTICS PARAMETER GATE-SOURCE LEAKAGE DRAIN-SOURCE BREAKDWON VOLTAGE ZERO GATE VOLTAGE DRAIN CURRENT GATE THRESHOLD VOLTAGE STATIC DRAIN-SOURCE ON-STATE RESISTANCE FORWARD TRANSFER ADMITTANCE INPUT CAPACITANCE OUTPUT CAPACITANCE REVERSE TRANSFER CAPACITANCE TURN-ON DELAY TIME RISE TIME TURN-OFF DELAY TIME ...

Page 3

PRODUCTS 8 . INNER CIRCUIT (2) ※1 BODY DIODE 9. MARKING ” K3050 ” MEANS 2SK3050 . K3050 F ” F ” MEANS THE PRODUCTION MONTH PLEASE SEE TABLE 1 FOR DETAILS. Table 1 Production month Marking REV. : A ...

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