IRF7241TRPBF International Rectifier, IRF7241TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7241TRPBF
• Description: MOSFET P-CH 40V 6.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7241TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3220pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 53 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7241PBFTR; IRF7241TRPBF; IRF7241TRPBFTR

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1000
0.01
100
100.00
0.1
10
10.00
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1.00
0.10
0.01
0.1
TOP
BOTTOM
2.5
-V
DS
T J = 150°C
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
, Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
3.0
T J = 25°C
1
3.5
-2.70V
20µs PULSE WIDTH
T = 25 C
J
10
V DS = -25V
20µs PULSE WIDTH
4.0
°
4.5
100
5.0
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
-6.2A
-V
T , Junction Temperature ( C)
DS
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
-2.70V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-10V
3
100