IRF7241TRPBF International Rectifier, IRF7241TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7241TRPBF
• Description: MOSFET P-CH 40V 6.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7241TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3220pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 53 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7241PBFTR; IRF7241TRPBF; IRF7241TRPBFTR

4
5000
4000
3000
2000
1000
100
0.1
10
1
0
0.4
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Coss
Crss
Ciss
Drain-to-Source Voltage
-V
T = 150 C
J
SD
-V DS , Drain-to-Source Voltage (V)
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.8
10
T = 25 C
J
f = 1 MHZ
°
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
0.1
20
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
0
I =
Fig 6. Typical Gate Charge Vs.
0
D
Tc = 25°C
Tj = 150°C
Single Pulse
-6.2A
Gate-to-Source Voltage
-V DS , Drain-toSource Voltage (V)
20
Q , Total Gate Charge (nC)
G
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
40
DS
DS
=-32V
=-20V
10
60
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10msec
100µsec
1msec
100
80
1000
100